Tutorial EQ10: Advanced Memory and Computing Technologies Using Phase Change Materials
November 28, 2022
Eric Pop, Stanford University
Fundamental, Thermal, and Energy Limits of PCM and RRAM
Written by Mohamed Atwa
Eric Pop concluded the tutorial with a scintillating session on the fundamental limits of phase change memory (PCM) in terms of thermal confinement. He began the session by providing a historical perspective on “ovonic threshold switching” and its discoverer, Stanford R. Ovshinsky, who first proposed the idea of a memristive device in 1968. He then provided a unique overview of how PCM and resistive random access memory (RRAM) work, and how they are both devices which rely on heating to induce some state change in the memory device. Pop compared different PCM geometries, highlighting the two most common geometries called “mushroom cell” and “confined cell” geometries. The tradeoffs of PCMs in terms of set/reset time, endurance, reset energy, and retention were all briefly touched upon. Pop launched into a detailed timeline of his group’s efforts to explore PCMs, starting with his seminal work on PCMs with carbon nanotube (CNT) electrodes in the 2010s. He detailed the progress his group has achieved since then, including templated synthesis of PCMs with CNT electrodes, an exploration of the thermoelectric effects in PCMs, and his group’s recent exploration of superlattice-based PCM materials. He concluded the talk with a positive outlook regarding the potential of PCMs for future optimization, stressing that the energy and current requirements of PCMs could still be reduced a hundredfold in the future.