Symposium QT06: Defects in Solid-State Materials for Quantum Technologies
April 11, 2025
David Awschalom, University of Chicago, Argonne National Laboratory
Quantum Spintronics with Silicon Carbide and Oxides
Written by Suman Mondal
Optically active spin defects in semiconductors, vital for quantum computing and sensing, now promises scalable integration with existing technologies. A research team from the University of Chicago and Argonne National Laboratory has pioneered silicon carbide (SiC) and erbium-doped cerium oxide (CeO₂) as platforms for robust, telecom-compatible quantum devices.
In SiC, the neutral divacancy (VV⁰) defect—isolated in optoelectronic devices—exhibits lifetime-limited photon emission and millisecond spin coherence, bolstered by isotopic engineering to minimize nuclear spin noise. “By tailoring the nuclear environment, we’ve extended spin coherence beyond 5 seconds—a milestone for solid-state qubits,” says co-author David Awschalom. The team also engineered vanadium ions in SiC, emitting in the telecom O-band (1,300 nm), which saw a 10,000-fold increase in spin relaxation time at cryogenic temperatures, ideal for fiber-based quantum networks.
Meanwhile, erbium-doped CeO₂ films on silicon substrates achieved 0.66 µs electron spin coherence and 2.5 ms relaxation at 3.6 K, leveraging CeO₂’s nuclear-spin-free lattice. At 77 mK, coherence times approach milliseconds, with on-chip ESR control. Er³+ in CeO₂ combines telecom compatibility with silicon integration—a game-changer for quantum hardware.
Key innovations include electrically tunable spin qubits in SiC heterostructures, Stark-shifted photon emission, and vanadium’s host-agnostic orbital structure for portable quantum nodes. The work bridges quantum defects with CMOS-compatible materials, accelerating scalable quantum networks.