Yoshihiro Iwasa, University of Tokyo & RIKEN
Electrolyte Gating on 2D Materials
Written by Natalie Briggs
Electrolytic double layer transistors are devices in which the conventional gate insulator material is replaced with an ionic liquid. The use of this ionic liquid can allow for accumulation of one to two orders of magnitude greater carrier density than what is seen in conventional gate insulator structures. As a result, this technique can allow for increased channel current and can be used to modify electronic states of the channel material. Yoshihiro Iwasa of the University of Tokyo has used electrolytic gating to explore a range of two-dimensional and layered materials, as well as their application in thermoelectric technologies. Specifically, Iwasa has shown that gate-induced superconductivity may be achieved in molybdenum disulfide using electrolytic gating. Additionally, Iwasa’s work demonstrates that layered materials such as FeSe exhibit an increase in Seebeck coefficient and power factor with decreasing layer number or thickness.