ES1: Materials Science and Chemistry for Grid-Scale Energy Storage
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EM11.6 : Why SNDM for Characterizing SiO2/SiC Interface Quality

In today's morning session of the symposium - SiC Power Electronics, Dr. Yasuo Cho from Tohoku University, Sendai, Japan stated significant key reasons for using Scanning Non Linear Dielectric Microscopy (SNDM)  to characterize SiO2 /SiC interface quality.

The properties of SNDM are - 

  1. It has high capacitance sensitivity. (10-22 f)
  2. It's applicability for wide range of materials and devices.
  3. It's excellent potential for semi conductor material characterization. 
  4. Quickly estimates time of trap density.

The above attributes makes SNDM a quick - sensitive- technique for characterizing interface quality.

 

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