In today's morning session of the symposium - SiC Power Electronics, Dr. Yasuo Cho from Tohoku University, Sendai, Japan stated significant key reasons for using Scanning Non Linear Dielectric Microscopy (SNDM) to characterize SiO2 /SiC interface quality.
The properties of SNDM are -
- It has high capacitance sensitivity. (10-22 f)
- It's applicability for wide range of materials and devices.
- It's excellent potential for semi conductor material characterization.
- Quickly estimates time of trap density.
The above attributes makes SNDM a quick - sensitive- technique for characterizing interface quality.