NT2: Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications
EE11: Caloric Materials for Renewable Energy Applications

EP11: Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory

Susan Fullerton, University of Pittsburgh

2D Electrolytes for the Development of 2D Crystal Memory

Written by Tine Naerland

Susan Fullerton of the University of Pittsburgh highlighted a new approach to memory that relies on the electrostatic gating of two-dimensional (2D) crystals using lithium ions. Unlike resistive random access memory (RRAM), where conductive filaments are formed and broken to create the 0 and 1 states, this memory concept relies on the physisorption of ions to the 2D crystal and there is no charge exchange. The advantages of this approach is less processing and potentially smaller devices compared to conventional technology. Drawbacks are lower switching speed than predicted. Many efforts are, however, currently underway to understand the materials properties that are limiting the switching speed.

Comments

Verify your Comment

Previewing your Comment

This is only a preview. Your comment has not yet been posted.

Working...
Your comment could not be posted. Error type:
Your comment has been posted. Post another comment

The letters and numbers you entered did not match the image. Please try again.

As a final step before posting your comment, enter the letters and numbers you see in the image below. This prevents automated programs from posting comments.

Having trouble reading this image? View an alternate.

Working...

Post a comment

Your Information

(Name and email address are required. Email address will not be displayed with the comment.)