Susan Fullerton, University of Pittsburgh
2D Electrolytes for the Development of 2D Crystal Memory
Written by Tine Naerland
Susan Fullerton of the University of Pittsburgh highlighted a new approach to memory that relies on the electrostatic gating of two-dimensional (2D) crystals using lithium ions. Unlike resistive random access memory (RRAM), where conductive filaments are formed and broken to create the 0 and 1 states, this memory concept relies on the physisorption of ions to the 2D crystal and there is no charge exchange. The advantages of this approach is less processing and potentially smaller devices compared to conventional technology. Drawbacks are lower switching speed than predicted. Many efforts are, however, currently underway to understand the materials properties that are limiting the switching speed.